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| Metal Oxides and Modern Microelectronics: Roles of Transition Metal Compounds and their Conversion to the Materials |
| Author Name | Affiliation | E-mail | | Tabitha M. Cook | Department of Chemistry, The University of Tennessee, Knoxville, Tennessee 37996, USA | | | Adam C. Lamb | Department of Chemistry, The University of Tennessee, Knoxville, Tennessee 37996, USA | | | XUE Zi-Ling | Department of Chemistry, The University of Tennessee, Knoxville, Tennessee 37996, USA | xue@utk.edu |
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| Abstract: Thin films of metal oxides such as HfO2 [known as high k dielectrics (or metal gate)] are a key component of modern microelectronic devices in computers (tablet, laptop and desktop), smartphones, smart TVs, automobiles and medical devices. The metal oxides, with large dielectric constants (k), have replaced SiO2 that has a small k of 3.9, thus making it possible to further miniaturize microelectronic components. Transition metal complexes have been widely used as precursors to produce thin films through their reactions with O2, H2O or O3 in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. The microelectronic metal oxide films are one of the most widely used nano materials. Recent progresses, including our studies of the reactions of d0 transition metal complexes with O2, are overviewed. |
| Keywords: metal oxides gate dielectrics thin films microelectronics CVD ALD |
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| Tabitha M. Cook,Adam C. Lamb,XUE Zi-Ling.Metal Oxides and Modern Microelectronics: Roles of Transition Metal Compounds and their Conversion to the Materials[J].Chinese Journal of Inorganic Chemistry,2017,33(11):1947-1958. |
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