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| Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory |
| Author Name | Affiliation | E-mail | | ZHANG Jia-Qi | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | | | WU Xiao-Feng | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | | | MA Xin-Yu | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | | | YUAN Long | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | | | HUANG Ke-Ke | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | | | FENG Shou-Hua | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China | shfeng@jlu.edu.cn |
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| Abstract: Amorphous La0.75Sr0.25MnO3(a-LSMO) was deposited by pulsed laser deposition (PLD) as an interlayer of a resistive-switching device (Ag/a-LSMO/ITO) with good non-volatile and bipolar resistance switching behaviour. Bottom ITO substrate and ultra-thin a-LSMO layer allow semi-transparent device fabrication. The formation of Ag filament connected from Ag electrode to ITO electrode is directly observed in the cross-sectional image by the high-resolution transmission electron microscope (HRTEM). The resistive switching in the device is attributed to the growth and dissolution of Ag filament in the amorphous LSMO layer. |
| Keywords: resistive random access memory manganite pulsed laser deposition perovskite |
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| ZHANG Jia-Qi,WU Xiao-Feng,MA Xin-Yu,YUAN Long,HUANG Ke-Ke,FENG Shou-Hua.Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory[J].Chinese Journal of Inorganic Chemistry,2018,34(4):784-790. |
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