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| Fabrication of Indium Tin Oxide Nanostructures by Electrospinning and Their Electrical Conductivity |
| Author Name | Affiliation | E-mail | | REN Xin-Chuan | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | | | LIU Su-Ting | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | | | LI Zhi-Hui | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | | | SONG Cheng-Kun | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | | | DAI Yun-Qian | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | daiy@seu.edu.cn | | SUN Yue-Ming | School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China | sun@seu.edu.cn |
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| Abstract: Indium tin oxide (ITO) nanofibers and ITO nanoparticles with enriched oxygen-defects were synthesized through facile electrospinning and sol gel method. SnCl2, InCl3, and PVP (polyvinylpyrrolidone) were selected as precursors, while ethanolamine was employed as a hydrolysis controlling agent. The morphology, crystal structure, oxygen defects, and electrical performance of the ultrafine ITO nanofibers and nanoparticles were systematically characterized by transmission electron microscope (TEM), selection electron diffraction (SAED), scanning electron microscope (SEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), X-ray electron spectroscopy (XPS), and four point resistance tester. The ITO nanofibers were obtained by removal of the PVP matrix at 400℃, and featured with ultrafine diameter, porous structure, and cubic phase. Furthermore, the resultant ITO nanofibers changed to oxygen-deficient nanoparticles with a high oxygen vacancy content of 38.9% at 800℃. The doping of Sn4+ ions into the In2O3 lattices leads to the expansion of the lattice and thus the increase of crystal plane spacing at elevated temperatures. When the temperature increased from 400 to 800℃, the size of ITO nanoparticles grown from 32 to 44 nm. Meanwhile, the lattice strain (ε0) decreased from 1.943×10-3 to 1.422×10-3 and the strain-induced lattice relaxation decreased accordingly. No phase change from cubic structure to hexagonal structure was observed. Additionally, calcination at elevated temperature could hamper the (111) growth and thus cause the increase in the ratio of I(400)/I(222) in In2O3 that is proportional to the electrical conductivity of ITO. The maximized electrical conductivity of ITO nanoparticles was obtained upon a calcination temperature of 800℃. |
| Keywords: nanostructures indium tin oxide oxygen vacancy, conducting material |
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| REN Xin-Chuan,LIU Su-Ting,LI Zhi-Hui,SONG Cheng-Kun,DAI Yun-Qian,SUN Yue-Ming.Fabrication of Indium Tin Oxide Nanostructures by Electrospinning and Their Electrical Conductivity[J].Chinese Journal of Inorganic Chemistry,2021,37(3):491-498. |
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