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Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets
Author NameAffiliationE-mail
ZHAO Ting School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China 
 
JIAN Jia-Ying School of Electronics and Information Engineering, Xi'an Technological University, Xi'an 710021, China
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China 
jianjiaying@xatu.edu.cn 
DONG Peng-Fan School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China 
 
FENG Hao School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China 
 
NAN Ya-Xin School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China 
 
CHANG Fang-E School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China  
Abstract: Here, SnS2 nanosheets with the size of 50-100 nm were synthesized by hydrothermal method, and was used as the resistive layer material (Cu/PMMA/SnS2/Ag, PMMA=polymethyl methacrylate) for the first time. The results showed that the ON/OFF ratio of Cu/PMMA/SnS2/Ag resistive random access memory was about 105, and the endurance was 2.7×103. The on-state voltage and off-state voltage were only about 0.28 and -0.19 V, respectively.
Keywords: resistive random access memory  tin disulfide  low operating voltage
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ZHAO Ting,JIAN Jia-Ying,DONG Peng-Fan,FENG Hao,NAN Ya-Xin,CHANG Fang-E.Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets[J].Chinese Journal of Inorganic Chemistry,2021,37(11):2020-2028.
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Chinese Journal of Inorganic Chemistry