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Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets |
Author Name | Affiliation | E-mail | ZHAO Ting | School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China | | JIAN Jia-Ying | School of Electronics and Information Engineering, Xi'an Technological University, Xi'an 710021, China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China | jianjiaying@xatu.edu.cn | DONG Peng-Fan | School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China | | FENG Hao | School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China | | NAN Ya-Xin | School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China | | CHANG Fang-E | School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China | |
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Abstract: Here, SnS2 nanosheets with the size of 50-100 nm were synthesized by hydrothermal method, and was used as the resistive layer material (Cu/PMMA/SnS2/Ag, PMMA=polymethyl methacrylate) for the first time. The results showed that the ON/OFF ratio of Cu/PMMA/SnS2/Ag resistive random access memory was about 105, and the endurance was 2.7×103. The on-state voltage and off-state voltage were only about 0.28 and -0.19 V, respectively. |
Keywords: resistive random access memory tin disulfide low operating voltage |
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ZHAO Ting,JIAN Jia-Ying,DONG Peng-Fan,FENG Hao,NAN Ya-Xin,CHANG Fang-E.Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets[J].Chinese Journal of Inorganic Chemistry,2021,37(11):2020-2028. |
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