| 离子层气相反应法(ILGAR)制备CuInS2薄膜的研究 | |
| Study on CuInS2 Thin Films Grown by Ion Layer Gas Reaction (ILGAR) Method | |
| 摘要: | |
| 关键词: CuInS2薄膜 ILGAR法 C2H5OH溶剂 | |
| 基金项目: | |
| Abstract: CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed. CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg is in the range of 1.30～1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 1016 cm-3. | |
| Keywords: CuInS2 thin films ILGAR methods C2H5OH solvent | |
| 投稿时间：2004-06-28 修订日期：2004-11-27 | |
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| 邱继军,靳正国,钱进文,石勇,武卫兵.离子层气相反应法(ILGAR)制备CuInS2薄膜的研究[J].无机化学学报,2005,21(3):399-404. | |
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