| 氧化镓纳米带的合成和发光性质研究 | |
| Growth and Optical Characterization of Ga2O3 Nanobelts | |
| 摘要: 采用化学气相沉积法，以碳纳米管作还原剂还原Ga2O3粉末，生成的气态Ga2O和载气Ar中的微量O2反应，在多孔氧化铝模板上沉积得到了Ga2O3纳米带。用扫描电子显微镜，透射电子显微镜和选区电子衍射对产物的结构和形态进行表征，发现产物为β-Ga2O3纳米带，宽度在20～500 nm之间，厚度为5～100 nm，长度可达几十微米。产物中还有几微米宽的Ga2O3纳米片。光致发光谱结果表明β-Ga2O3纳米带能发射蓝光和紫外光。文中还简单推测了β-Ga2O3纳米带的形成机理。 | |
| 关键词: 氧化镓 纳米带 化学气相沉积 光致发光 | |
| 基金项目: | |
| Abstract: Ga2O3 nanobelts were prepared on anodic porous alumina substrate by chemical vapor deposition, with Ga2O3 powder as precursor and carbon nanotubes as reductant. The structure of the product was characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electronic diffraction. It was confirmed that the nanobelts were single crystalline β-Ga2O3, with the width and thickness ranging from 20 nm to 1 μm, and 5 to 100 nm, respectively. The length of the nanobelts could reach millimeter. Photoluminescence spectrum indicated that these Ga2O3 nanobelts had blue and ultraviolet emission and a blue-shift was observed due to the nanostructure. The formation mechanism was briefly discussed. | |
| Keywords: Ga2O3 nanobelts chemical vapour deposition photoluminescence | |
| 投稿时间：2005-01-17 修订日期：2005-03-17 | |
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| 郭彦,吴强,王喜章,胡征,陈懿.氧化镓纳米带的合成和发光性质研究[J].无机化学学报,2005,21(5):669-672. | |
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