SinH/SinH-(n=3~8)的结构和电子亲合能的研究
Structures and Electron Affinities of the Silicon Hydrides SinH/SinH- (n=3~8)
作者单位
杨桔材 北京理工大学理学院北京 100081
内蒙古工业大学化学工程学院呼和浩特 010062 
徐文国 北京理工大学理学院北京 100081 
肖文胜 北京理工大学理学院北京 100081 
摘要: 选用四种不同的密度泛函理论方法(B3LYP,B3P86,BLYP,BP86),在全电子的双ζ加极化加弥散函数基组(DZP++)下,对SinH/SinH-(n=3~8)体系进行研究,获得它们的基态结构和电子亲合能。预测Si3H/Si3H-,Si4H/Si4H-,Si
关键词: 硅氢化物  分子结构  电子亲合能  密度泛函理论
基金项目: 
Abstract: Four different density functional theory (DFT) methods (B3LYP, B3P86, BLYP, and BP86) have been employed to predict the molecular structures and adiabatic electron affinities of the SinH/SinH- (n=3~8) species. The basis set used in this study is of double-ζ plus polarization quality with additional s- and p-type diffuse functions, labeled as DZP++. The ground states of Si3H/Si3H-,Si4H/Si4H-,Si5H/Si5H-,Si6H/Si6H-,Si7H/Si7H-, and Si8H/Si8H- are C2v(2B2)/C2v(1A1) H-bridged structures, Cs(2A′)/Cs(1A′),C2v(2B2)/C2v(1A1),C2v(2B2 or 2B1)/C4v(1B1),C5v(2B1)/C5v(1B1) and Cs(2A″)/C3v(1A1), respectively. Compared with the experimental values, the B3LYP in all of these schemes is the best in respect of predicting electron affinities. The electron affinities corrected by zero-point vibrational energies for Si3H,Si4H,Si5H,Si6H,Si7H,and Si8H are 2.56, 2.59, 2.84, 2.86, 3.19, and 3.14 eV, respectively.
Keywords: silicon monohydrides  molecular structures  electron affinities  density functional theory
投稿时间:2004-11-02 修订日期:2005-03-10
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杨桔材,徐文国,肖文胜.SinH/SinH-(n=3~8)的结构和电子亲合能的研究[J].无机化学学报,2005,21(6):805-809.
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