| 热处理对SILAR法制备CuInSe2薄膜性能的影响 |
| Effects of Post-heat Treatment on Performance of Chalcopyrite CuInSe2 Film Prepared by SILAR Method |
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| 摘要: |
| 关键词: CuInSe2薄膜 SILAR法 煅烧温度 光学性能 |
| 基金项目: |
| Abstract: CuInSe2 ternary films were prepared by successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe2 with high degree of preferred orientation towards (112) reflection could be obtained by post-heat treatment. The compositions of films calcined at 300～400 ℃ were close to the standard stoichiometry and Cl impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature. |
| Keywords: CuInSe2 films SILAR method calcination temperature optical properties |
| 投稿时间：2005-03-28 修订日期：2005-06-05 |
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| 杨建立,靳正国,石勇,李春艳,安贺松.热处理对SILAR法制备CuInSe2薄膜性能的影响[J].无机化学学报,2005,21(11):1701-1704. |
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