| 高压条件下合成硅纳米线 |
| Preparation of Silicon Nanowires under High Pressure |
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| 摘要: |
| 关键词: 硅纳米线 氧化物辅助生长 高压裂解 |
| 基金项目: |
| Abstract: Silicon nanowires (SiNWs) were synthesized with silicon monoxide as the only starting material. At the beginning, a protective gas argon was charged into the reaction chamber and the temperature ramp was controlled at 3 ℃·min-1. The growth condition for SiNWs was controlled at 480 ℃ under the pressure of 2.8 MPa. The morphology and the structure of the products were characterized by TEM, HRTEM and XRD. The results revealed that SiNWs were diamond structure and their diameters were distributed from 5 to 25 nm. The SiNW was single crystal in the central core and was coated with amorphous silica shell at the exterior surface. Influenced by the quantum effect, Raman spectrum of the SiNWs was found to be redshifted. The oxide-assisted growth mechanism was suggested to explain the growth model of self-assembled SiNWs. |
| Keywords: silicon nanowire oxide-assisted growth mechanism decomposition under high pressure |
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| 陈扬文,江素华,邵丙铣,汪荣昌.高压条件下合成硅纳米线[J].无机化学学报,2007,23(5):915-918. |
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