通过硅烷偶联剂在硅和铟锡氧化物(ITO)表面嫁接寡聚芴分子
Covalent Attachment of Oligofluorenes onto Si and Indium Tin Oxide(ITO) Substrates by Grafting with Organosilanes
作者单位
段 瑜 复旦大学先进材料研究院上海 200433 
温贵安 复旦大学先进材料研究院上海 200433 
许国勤 新加坡国立大学化学系新加坡 119260新加坡 
黄 维 江苏省有机电子与平板显示重点实验室南京邮电大学信息材料与纳米技术研究院南京 210003 
摘要: 通过硅烷偶联剂γ-氨丙基三乙氧基硅烷(3-aminopropyl-triethoxysilane,APTES)的“分子桥梁”作用,采用两种不同的方法,把修饰后的寡聚芴分子键联到硅表面和铟锡氧化物(ITO)表面上。X射线光电子能谱(XPS)、原子力显微镜(AFM)和循环伏安(CV)方法等的表征证实了通过硅烷偶联剂在硅表面和ITO表面嫁接寡聚芴分子可行性。
关键词:   铟锡氧化物  硅烷偶联剂  寡聚芴分子  嫁接
基金项目: 
Abstract: Two methods of introducing oligofluorenes onto Si and indium tin oxides(ITO) substrates by grafting with organosilane are presented. The organosilane, 3-aminopropyltriethoxysilane(APTES), was used as molecular bridge to link oligofluorenes onto silicon and ITO substrates. Such substrate-based oligofluorenes films were investigated by X-ray photoelectron spectroscopy(XPS), AFM, and electrochemical analysis. All results prove that oligofluorenes immobilization on silicon and ITO substrates through orgaosilane molecular bridge is feasible.
Keywords: silicon  indium tin oxide  organosilanes  immobilization
 
摘要点击次数:  1162
全文下载次数:  2706
段 瑜,温贵安,许国勤,黄 维.通过硅烷偶联剂在硅和铟锡氧化物(ITO)表面嫁接寡聚芴分子[J].无机化学学报,2008,24(10):1596-1603.
查看全文  查看/发表评论  下载PDF阅读器
Support information: