| ZnGeP2的多晶合成与单晶生长研究 |
| Polycrystal Synthesis and Single Crystal Growth of ZnGeP2 |
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| 摘要: 采用富P配料工艺，通过改进的单温区合成法(MSTZM)合成出高纯、单相的ZnGeP2多晶原料。用改进垂直布里奇曼法(MVBM)生长出尺寸为Φ20 mm×30 mm的ZnGeP2单晶体。经X射线衍射分析、红外光谱分析、ZC36高阻仪测试表明：晶体完整性好，具有黄铜矿结构，晶格常数a=b=0.546 3 nm，c=1.070 9 nm。晶体的透光范围为0.65～12.5 μm。厚度为2 mm的晶片在2～12 μm范围内的平均红外透过率达55%以上，电阻率为6×107 Ω·cm，计算2.05 μm和10.6 μm处的吸收系数分别为0.017 cm-1和0.21 cm-1。 |
| 关键词: 磷锗锌 改进垂直布里奇曼法 晶体生长 红外光谱 |
| 基金项目: |
| Abstract: High-purity and single-phase ZnGeP2(ZGP) polycrystal was synthesized by Zn, Ge, and red P elements(99.9999%) according to the stoichiometry of ZnGeP2 with an excess of 0.2% P through a Modified Single-Temperature Zone Method(MSTZM). An integral ZnGeP2 single crystal with size of Φ 20 mm×30 mm was obtained by Modified Vertical Bridgman Method (MVBM). The as-grown crystals were characterized by X-ray diffraction(XRD)， ZC36 Megger，Ultraviolet(UV) and Infrared(IR) spectroscopy. XRD analysis indicates ZnGeP2 crystal is chalcopyrite structure, the lattice constants of a and c are 0.546 3 nm and 1.070 9 nm, respectively. The transparency range of a ZGP wafer with 2 mm thickness is 0.65～12.5 μm, the infrared transmission is above 55% in the spectral region of 2～12 μm. Resistivity of the crystal is about 107 cm magnitude. The value of absorption coefficient(α) at 2.05 μm and 10.6 μm are 0.017 cm-1 and 0.21 cm-1, respectively. These results demonstrate that the quality of the as-grown crystal is high enough for applications in infrared nonlinear devices. |
| Keywords: ZnGeP2 MVBM crystal growth IR spectroscopy |
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| 赵 欣,朱世富,赵北君,陈宝军,孙永强.ZnGeP2的多晶合成与单晶生长研究[J].无机化学学报,2009,25(1):99-103. |
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