| 在ITO导电衬底上室温电沉积高取向的CuBr薄膜 |
| Room Temperature Electrodeposition of Highly Oriented CuBr on Indium Tin Oxide Glass Substrate |
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| 摘要: 室温下，通过简单的电沉积过程还原CuBr2水溶液可在ITO导电衬底上生长出高取向的CuBr晶体。用X-射线衍射仪(XRD)、扫描电镜(SEM)对样品进行了表征。结果表明：CuBr晶体生长沿着<111>晶轴方向具有优先取向。通过烷基咪唑四氟硼酸盐[Bmim][BF4]离子液体来调控电沉积CuBr的晶体形貌，添加[Bmim][BF4]后，CuBr晶体生长 (111)面优先取向大大削弱。对离子液体调控CuBr晶体形貌的机理进行了初步探讨。 |
| 关键词: CuBr 电沉积 高取向 离子液体 |
| 基金项目: |
| Abstract: A simple electrodeposition process has been demonstrated to grow highly oriented copper(Ⅰ) bromide crystals on indium doped tin oxide (ITO) glass substrate through reduction of CuBr2 in aqueous solutions at room temperature. The samples were characterized by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The experimental results show that the copper(Ⅰ) bromide crystals grow preferentially along the <111> crystal axis. Morphology control of electrodeposited CuBr crystals by alkylimidazolium tetrafluorobo-rate ([Bmim][BF4]) ionic liquids have also been explored. when [Bmim][BF4] was added, the prefered crystal orientations of the as-prepared CuBr films have weakened largely. The crystal growth mechanism of the CuBr films prepared by the electrodeposition method with ionic liquids as additives was studied preliminarily. |
| Keywords: CuBr electrodeposition orientation ionic liquids |
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| 李 赫,徐铸德.在ITO导电衬底上室温电沉积高取向的CuBr薄膜[J].无机化学学报,2009,25(2):231-235. |
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