| 直流电弧自催化合成β-SiC纳米线(英文) |
| Self-catalytic Synthesis of β-SiC Nanowires by Direct Current Arc Discharge |
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| 摘要: 采用C，Si和SiO2为反应原料，利用直流电弧法制备出长直的β-SiC纳米线。纳米线的直径为100～200 nm，长度为10～20 μm，并且沿着<111>方向生长。通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段，对β-SiC纳米线进行表征。探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制。 |
| 关键词: β-SiC 纳米线 直流电弧 |
| 基金项目: |
| Abstract: Straight and long β-SiC nanowires were synthesized in direct current arc discharge using a mixture of graphite, silicon, and silicon dioxide as the precursor. The diameter of the nanowires is 100～200 nm, and the length is about 10～20 μm. The axis of the nanowire is preferentially along the <111> direction. The morphology and structure of the nanowires were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS), transmission electron microscopy(TEM) and Raman spectroscopy. The β-SiC nanowires are suggested to be formed via a self-catalyzed vapor-liquid-solid growth mechanism. |
| Keywords: β-SiC nanowires direct current arc discharge |
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| 王 峰,王秋实,崔启良,张 剑,邹广田.直流电弧自催化合成β-SiC纳米线(英文)[J].无机化学学报,2009,25(6):1026-1030. |
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