| Ga掺杂纳米TiO2薄膜的制备及其光电特性 |
| Ga-Doped Nano-TiO2 Thin Films: Preparation, Optical and Electrical Properties |
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| 摘要: 利用射频磁控溅射法在玻璃衬底上制备了Ga掺杂的TiO2薄膜，并在真空中于550 ℃下进行了2 h的退火处理。采用XRD、SEM、UV-Vis和PL光谱对薄膜进行了表征。XRD结果提示，在溅射功率为200 W，室温下制备的TiO2薄膜具有混晶结构，且退火后的晶粒有长大的趋势。SEM分析表明，掺Ga薄膜的颗粒分布得较为均匀并存在尺寸变小的趋势，且出现有利于提高光催化性能的岛状结构，其平均颗粒尺寸为50 nm。UV-Vis透过谱指出，掺Ga后的TiO2薄膜吸收边发生了明显红移，且退火后进一步红移了10~50 nm。通过接触角的测量与计算可知，550 ℃退火2 h后的薄膜具有良好的亲水性。光催化降解结果表明：样品具有较强的光催化能力。当用低功率(15 W)紫外灯照射8 h后，Ga掺杂的纳米TiO2薄膜样品对亚甲基蓝溶液的降解率最高可达到71.8%。 |
| 关键词: 纳米TiO2薄膜 Ga掺杂 退火 红移 亲水性 光催化 |
| 基金项目: |
| Abstract: The gallium-doped TiO2 thin films were deposited on glass substrate by Radio Frequency(RF) magnetron sputtering, and annealing treated in vacuum for 2 h at 550 ℃. The films were characterized using XRD, SEM, UV-Vis transmission spectraoscopy. XRD results show that the TiO2 thin films change to mixed crystal with sputtering power of 200 W at room temperature, and the grains have grown up trend after annealing. SEM results reveal that Ga-doped thin films have a more uniform and smaller particle size distribution with an average size of 30 nm. The surface morphology is land-like. UV-Vis transmission spectra show that the absorption edge of the Ga-doped thin films occurs obviously red-shifted, and even a red-shift of 10~50 nm is found after annealing. The films have good hydrophilicity as evidenced by contact angle measurement and calculation. The samples exibit good photocatalytic activity as shown by the degradation rate of 71.8% for methylene blue solution after 8 h irradiation under low power UV lamp(15 W). |
| Keywords: nano-TiO2 thin films ga doping annealing red-shift Hydrophilicity photocatalytic |
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| 刘贵昂,张 军,何学敏.Ga掺杂纳米TiO2薄膜的制备及其光电特性[J].无机化学学报,2009,25(11):1939-1946. |
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