ZnO@SiO2同轴纳米电缆的静电纺丝技术制备与表征 |
ZnO@SiO2 Coaxial Nanocable: Preparation via Electrospinning and Characterization |
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摘要: 采用同轴静电纺丝技术,以硝酸锌、正硅酸乙酯(C8H20O4Si)、无水乙醇、聚乙烯吡咯烷酮(PVP)和N,N-二甲基甲酰胺(DMF)为原料,成功制备出大量的ZnO@SiO2同轴纳米电缆。用TG-DTA,XRD,SEM,TEM,FTIR等分析技术对样品进行了表征。结果表明,得到的ZnO@SiO2同轴纳米电缆的壳层为无定型SiO2,厚度为50 nm,芯轴为晶态ZnO,电缆直径为300~450 nm,长度大于300 μm。探讨了ZnO@SiO2同轴纳米电缆的形成机理。 |
关键词: 同轴静电纺丝技术 同轴纳米电缆 纳米电缆 氧化锌 二氧化硅 |
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Abstract: ZnO@SiO2 coaxial nanocables were prepared in lagre scale by coaxial electrospinning using Zn(NO3)2, C8H20O4Si, absolute ethanol, Polyvinylpyrrolidone(PVP) and Dimethylformamide(DMF) as the starting materials. The samples were characterized by TG-DTA, XRD, SEM, TEM and FTIR techniques. The as-prepared coaxial nanocables with a mean outer diameter of 300~450 nm and shell thickness of 50 nm are with a crystalline ZnO core and an amorphous shell of SiO2. The length of ZnO@SiO2 nanocables is greater than 300 μm. |
Keywords: coaxial electrospinning coaxial nanocables nanocables ZnO SiO2 |
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王进贤,张 贺,董相廷,刘桂霞.ZnO@SiO2同轴纳米电缆的静电纺丝技术制备与表征[J].无机化学学报,2010,26(1):29-34. |
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