MoO3和SiO2掺杂对Ce0.8Nd0.2O1.9固体电解质结构和导电性能的影响 |
Effects of MoO3 and SiO2-dopant on Sintering and Electrical Properties of Ce0.8Nd0.2O1.9 Solid Electrolytes |
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摘要: 采用溶胶-凝胶法合成高纯(<50 mg·kg-1 SiO2) Ce0.8Nd0.2O1.9(NDC)和SiO2含量为500 mg·kg-1的Ce0.8Nd0.2O1.9(NDCSi)体系,将1mol% MoO3分别加入到NDC和NDCSi体系,比较研究MoO3掺杂对体系微观结构和电性能的影响。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征,交流阻抗(AC)分析仪测试材料的电阻。 结果表明:MoO3和SiO2的加入均没有破坏体系的立方莹石结构;MoO3掺杂能提高NDC和NDCSi陶瓷材料的致密度,提高其晶界电导率和总电导率;MoO3掺入NDC体系具有烧结助剂的作用,掺入NDCSi体系既具有烧结助剂的作用,又具有晶界改善剂的作用。 |
关键词: MoO3掺杂 烧结助剂 晶界改善剂 电导率 |
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Abstract: The Ce0.8Nd0.2O1.9(NDC) (<50 mg·kg-1 SiO2) and 500 mg·kg-1 SiO2 of Ce0.8Nd0.2O1.9(NDCSi) with and without 1mol% MoO3 systems were prepared by the so-gel method. The characterizations of samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and AC impedance spectroscopy. The XRD results showed that these materials were single phases with a cubic fluorite-type structure. The addition of MoO3 improved the densification for NDC and NDCSi. The grain boundary and total conductivity of NDC and NDCSi with 1mol% MoO3 systems increased. Therefore, MoO3 should be considered to be not only an effective sintering aid, but also a new scavenger of the grain boundary for NDCSi. |
Keywords: MoO3-doping sintering aids scavenger electrical conductivity |
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摘要点击次数: 2008 |
全文下载次数: 2493 |
赵桂春,周德凤,杨 梅,夏燕杰,孟 健.MoO3和SiO2掺杂对Ce0.8Nd0.2O1.9固体电解质结构和导电性能的影响[J].无机化学学报,2011,27(5):860-864. |
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