钛表面含硅羟基磷灰石涂层的电化学合成和表征
Synthesis and Charaterization of Silicon-Substituted Hydroxyapatite Coating by Electrochemical Deposition on Ti Substrate
作者单位
李登虎 浙江大学材料科学与工程学系杭州 310027 
林 军 浙江大学医学院附属第一医院口腔科杭州 310003 
林东洋 浙江大学材料科学与工程学系杭州 310027 
王小祥 浙江大学材料科学与工程学系杭州 310027 
摘要: 在含有Ca2+,PO43-以及SiO32-的电解液中,通过电化学恒电位方法,在工作电压为3 V温度为85 ℃的条件下沉积1 h,于钛表面上制得含硅羟基磷灰石涂层。通过电感耦合等离子体原子发射光谱(ICP)、扫描电镜(SEM)、X-射线衍射(XRD)、探针式轮廓仪(SP)、红外光谱(FTIR)对涂层进行分析。结果表明:电化学恒电位方法可制得Si饱和含量为0.55wt%左右的Si-HA涂层,Si以SiO44-形式取代PO43-进入HA晶格,造成羟基磷灰石中OH-减小以维持电荷平衡。另外,电解液中Si元素的存在抑制涂层中HA晶体的生长,使涂层变薄,且当电解液中nSi/(nSi+nP)达到20%时Si-HA晶体形貌由单独的棒状转变为根部相连的树枝状。
关键词: 羟基磷灰石  硅掺杂  电化学沉积  涂层
基金项目: 
Abstract: Silicon-substituted hydroxyapaptite coatings were prepared on titanium substrate with electrochemical deposition technique in electrolytes containing Ca2+, PO43- and SiO32- ions. The deposition was all conducted at a constant voltage of 3.0 V for 1 h at 85 ℃. The as-prepared coatings were examined by inductively coupled plasma(ICP), X-ray diffraction(XRD), stylus profiler(SP), Fourier transform infrared spectroscopy(FTIR), field-emission-type scanning electron microscope (SEM). The results show that the silicon amount in Si-HA coatings deposited by electrochemical method can reach to a saturation level of around 0.55wt%, and the substitution of silicate for phosphate in the form of SiO44- results in loss of some OH- to maintain the charge balance. Additionally, the presence of silicon ions in electrolytes inhibits HA crystals growth in coatings, leading to decrease of coating thickness and transformation of rod-like crystals into dendritic crystals in the electrolyte of 20% molar ratio silicon.
Keywords: hydroxyapatite  silicon-substitution  electrodeposition  coating
 
摘要点击次数:  1559
全文下载次数:  1607
李登虎,林 军,林东洋,王小祥.钛表面含硅羟基磷灰石涂层的电化学合成和表征[J].无机化学学报,2011,27(6):1027-1032.
查看全文  查看/发表评论  下载PDF阅读器
Support information: