| 柠檬酸浓度对化学浴沉积硫化铟薄膜形成机理的影响研究 |
| Effect of Concentration of Citric Acid on the Formation Mechanism of In2S3 Thin Film by Chemical Bath Deposition |
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| 摘要: 以柠檬酸为配位剂，在酸性条件下采用化学浴沉积方法在FTO玻璃衬底上制得硫化铟薄膜，分别采用XRD、SEM、UV等手段对薄膜相结构、形貌和薄膜的透光率进行了表征。结果表明薄膜为立方结构的β-In2S3，薄膜均一连续，呈网状表面形貌，透光率随厚度增加而递减，带隙宽度介于2.5~2.6 eV之间。主要研究了配位剂的浓度对薄膜形成机理的影响，结果表明：柠檬酸浓度较低时，柠檬酸根与铟离子的配位平衡是整个反应的速控步骤；当柠檬酸浓度较高时，硫代乙酰胺与酸作用生成硫离子的反应是整个反应的速控步骤。 |
| 关键词: 化学浴 薄膜 硫化铟 柠檬酸 形成机理 |
| 基金项目: |
| Abstract: A series of In2S3 thin films were obtained via chemical bath deposition method on the FTO glass in the acidic solution, with citric acid as the complexing agent. XRD, SEM, UV were adopted to characterize phase structure, morphology and optical transmission of the thin films. The results indicated that all the thin films were cube structured β-In2S3, with uniform, network-like morphology. Transmission of films was step-down with the thickness of films increasing. Band gaps were calculated between 2.5 and 2.6 eV. The effect of concentration of the complexing agent on the thin films formation mechanism was investigated. The results showed that when the concentration of citric acid was lower, control step of the whole reaction system was the complexation balance of citric acid ions and metal indium ions, and when higher, the key reaction was that thioacetamide decomposed to form sulfide ion under acidic condition. |
| Keywords: chemical bath deposition thin film indium sulfide citric acid formation mechanism |
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| 全文下载次数: 1974 |
| 高志华,刘晶冰,汪 浩.柠檬酸浓度对化学浴沉积硫化铟薄膜形成机理的影响研究[J].无机化学学报,2011,27(9):1685-1690. |
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