Abstract: A novel Ir-complex (BPPBI)2Ir(ECTFBD) (HBPPBI=2-(biphenyl-4-yl)-1-phenyl-1H-benzo[d]imidazole, HECTFBD=1-(9-ethyl-9H-carbazol-3-yl)-4,4,4-trifluorobutane-1,3-dione) containing carrier transport moieties was synthesized and characterized by 1H NMR and elemental analysis. The photophysical and electrochemical properties of (BPPBI)2Ir(ECTFBD) in dichloromethane were investigated. The Ir-complex-based electroluminescent devices were fabricated. The structure of devices was ITO/MoO3 (10 nm)/NPB (80 nm)/CBP: x% (BPPBI)2Ir(ECTFBD) (20 nm)/TPBi(45 nm)/LiF/Al [x%: 4% and 7% doping concentration by weight; NPB=N4,N4′-di(naphthalen-1-yl)-N4,N4′-diphenylbiphenyl-4,4′-diamine, CBP=4,4′-di(9H-carbazol-9-yl)biphenyl, TPBi=1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene]. Deep yellow emission from the emissive layer was obtained. For the device at 7 wt% doping concentration, the maximum current efficiency and the maximum brightness were 5.2 cd·A-1 and 8 690 cd·m-2, respectively. |