| ZnSnO3透明导电薄膜：溶胶-凝胶法制备及性能 |
| Transparent and Conductive Properties of ZnSnO3 Crystal Films Prepared by Sol-Gel Method |
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| 摘要: 采用溶胶-凝胶(Sol-Gel)过程和旋涂法制备了Zn-Sn-O系统薄膜。通过对干凝胶的热重-差示扫描同步热分析(TG-DSC)，研究了干凝胶在烧结过程中的反应历程。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、场发射扫描电镜(FE-SEM)以及紫外-可见透过率(UV-Vis)等表征了烧结后薄膜的晶相、 晶格缺陷、微观形貌以及紫外-可见光透过率。本文还研究了烧结温度、N2气氛热处理以及组成变化对薄膜电阻率的影响，结果表明：偏锡酸锌ZnSnO3晶体薄膜具有较低的电阻率；当nZn/(nZn+nSn)=50.3at%时，薄膜的电阻率达极小值，约为8.0×102 Ω·cm。偏锡酸锌ZnSnO3晶体的导电机理研究表明：晶格中间隙阳离子含量的增加有利于薄膜电阻率的降低，而氧空位的形成则使其电阻率升高。薄膜的紫外-可见光透过率(UV-Vis)表明：偏锡酸锌ZnSnO3晶体薄膜在400~900 nm的可见光波段透过率可达80%以上。 |
| 关键词: ZnSnO3 薄膜 溶胶-凝胶法 透明性 导电材料 |
| 基金项目: |
| Abstract: The Zn-Sn-O system thin films were fabricated by sol-gel process and spin coating technique on silica glasses. The reaction of dry gel during sintering was characterized by Themogravimetry-Differential Scanning Calorimetry synchronous thermal analysis (TG-DSC). And the crystalline phases, the defects, the morphology and the transmittance of films after sintering in air were characterized by XRD, XPS, FE-SEM and UV-Vis. The resistivity of the films is affected by the sintering temperature in air, the treatment in N2 and the film composition. The ZnSnO3 crystal has a low resistivity and the minimum resistivity (about 8.0×102 Ω·cm )is obtained when nZn/(nZn+nSn) is equal to 50.3at%. The electric property testing results also show that the defect of interstitial cations in ZnSnO3 lattice is beneficial for a lower resistivity, meanwhile the oxygen vacancies in the lattice leads to an opposite result. The UV-Vis analysis indicates that the transmittance of ZnSnO3 crystal films is more than 80% in the range of 400~900 nm. |
| Keywords: ZnSnO3 thin films Sol-Gel process transparency conductive material |
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| 季伶俐,贺蕴秋,李 乐.ZnSnO3透明导电薄膜：溶胶-凝胶法制备及性能[J].无机化学学报,2012,28(3):437-444. |
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