| Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能(英文) |
| Dielectric Properties and Microstructure of Bi4(Ti1/3Sn2/3)3O12 Doping BaTiO3-Based X8R Ceramics |
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| 摘要: 研究了Bi4(Ti1/3Sn2/3)3O12掺杂对钛酸钡基陶瓷微观结构和介电性能影响。结果表明，掺杂Bi4(Ti1/3Sn2/3)3O12后钛酸钡基陶瓷晶粒明显长大，同时烧结温度可由1 280 ℃降低至1 180 ℃。系统的介电性能和Bi4(Ti1/3Sn2/3)3O12的掺杂量有密切关系。当 Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%，体系的居里峰被明显压低和展宽，当掺杂量为2mol%时居里峰变得不明显。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%，系统的居里温度由131 ℃升高至139 ℃。当Bi4(Ti1/3Sn2/3)3O12的掺杂量为1mol%时，钛酸钡基陶瓷介电常数为1 930，介电常数温度变化率为5%(-55 ℃)，13%(134 ℃)，-8%(150 ℃)，满足X8R标准。 |
| 关键词: 晶粒生长 介电性能 钛酸钡 X8R |
| 基金项目: |
| Abstract: The effect of Bi4(Ti1/3Sn2/3)3O12 addition on the microstructure and dielectric properties of BaTiO3-based ceramics was investigated. The grain size is significantly enhanced and the sintering temperature of BaTiO3-based ceramics could be lowered to 1 180 ℃ when Bi4(Ti1/3Sn2/3)3O12 is introduced. The dielectric properties are strongly correlated with the doping content of Bi4(Ti1/3Sn2/3)3O12. The dielectric constant peak and the variation rate of capacitance at Curie temperature is markedly depressed and broadened when the Bi4(Ti1/3Sn2/3)3O12 content is increased from 0.5mol% to 2.0mol%. When the content is 2mol%, the Curie peak becomes inconspicuous. The Curie temperature is shifted from 131 ℃ to 139 ℃ when the Bi4(Ti1/3Sn2/3)3O12 content is increased from 0.5mol% to 2.0mol%. When doping 1mol% Bi4(Ti1/3Sn2/3)3O12, the BaTiO3-based ceramics exhibit a dielectric constant of 1 930, the variation of dielectric constant as compared with that at room temperature is about 5% at -55 ℃，13% at 134 ℃ and -8% at 150 ℃, respectively. |
| Keywords: grain growth dielectric properties barium titanate X8R |
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| 肖 谧,王 新,张倩倩,丁华明.Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能(英文)[J].无机化学学报,2012,28(8):1743-1748. |
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