| Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响 | |
| Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor | |
| 摘要: 采用高温固相法分别合成了Sb3 ,Bi3 ,Zr4 ,Si4 共掺杂的YAG:Ce黄色荧光粉。研究了YAG:Ce黄色荧光粉的发光强度随元素种类以及微量掺杂浓度的变化情况及相关机理。结果显示,随着元素Sb3 ,Bi3 ,Zr4 ,Si4 掺杂浓度的增加,发射峰强度均表现出先增大后减小的趋势。Sb3 ,Bi3 与Ce3 之间存在多极子相互作用和辐射再吸收的能量传递及晶格修复作用,当Sb3 ,Bi3 掺杂浓度分别为0.5和0.1 mmol时发射峰强度达到最大值,分别提高了35.5%和44.8%。在YAG:Ce中由于Zr4 ,Si4 的电荷补偿作用,促进Ce4 →Ce3 的转化,从而提高了YAG:Ce的发光强度。Zr4 ,Si4 掺杂浓度分别在0.3和7 mmol时达到最大值,分别提高了27.4%和31.2%。由荧光粉颗粒形貌可知,Sb3 ,Bi3 ,Zr4 ,Si4 元素的微量掺杂能促使晶粒长大,并且近似球型,导致发光强度有明显的提高。 | |
| 关键词: YAG：Ce 荧光粉 共掺杂 能量传递 晶格缺陷 | |
| 基金项目: 国家自然科学基金(No.40643018)资助项目。 | |
| Abstract: The Sb3 , Bi3 , Zr4 and Si4 doped YAG:Ce yellow phosphors were synthesized by high temperature solid-state method. The doping effect and the related mechanism of Sb3 , Bi3 , Zr4 and Si4 on the luminescence intensity of YAG:Ce were studied. The results show that the luminescence intensity firstly increases with the increases of the Sb3 , Bi3 , Zr4 and Si4 concentration, then decreases. The energy transfer from Sb3 and Bi3 to Ce3 took the mechanism of the multipolar interactions, which leads the improvements of the emission intensity about 35.5% at 0.5 mmol for Sb3 and 44.8% at 0.1 mmol for Bi3 , respectively. The additions of Zr4 and Si4 promote further reduction of Ce4 to Ce3 , owing to spontaneous charge compensation. The highest emission intensity is obtained at the concentrations of Zr4 and Si4 of 0.3 mmol and 7 mmol, which is increased by 27.4% and 31.2%, respectively. With the doping of Sb3 , Bi3 , Zr4 and Si4 elements, the growth of phosphor particle is improved, resulting in the enhancement of phosphors emission. | |
| Keywords: YAG：Ce phosphors Co-deped energy transmission oxygen vacancy | |
| 投稿时间：2013-01-29 修订日期：2013-04-07 | |
| 摘要点击次数: 2072 | |
| 全文下载次数: 3417 | |
| 孙夏微,谭劲,李聪明,雷婷,孟小康,鄢维,张玮,冯珊.Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响[J].无机化学学报,2013,29(9):1863-1869. | |
| 查看全文 查看/发表评论 下载PDF阅读器 | |
| Support information: | |
|
| |
|
| |
|
| |