| 二氧化锡薄膜：制备及在室温下气敏性质 |
| Tin Oxide Thin Films：Synthesis and Room Temperature Gas Sensing Properties |
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| 摘要: 利用溶胶-凝胶法首先在玻璃基片上制备了氧化锡晶种膜，之后采用溶剂热法在其上生长了致密的氧化锡薄膜。利用扫描电子显微镜和X射线衍射技术对氧化锡薄膜的形貌和晶体结构进行了表征，结果表明构成薄膜的氧化锡晶粒具有四方锡石结构，尺寸在7~10nm之间。表面活性剂在溶剂热反应过程中对薄膜生长的研究表明，十二烷基苯磺酸钠可以显著提高薄膜的质量。对所制备的氧化锡薄膜进了气敏性质研究，结果表明，在温和的测试条件下，如室温、常压、干燥的空气背景等，该氧化锡薄膜对二氧化氮气体具有良好的探测能力，检测限为0.5μL·L-1。 |
| 关键词: 薄膜 X-射线衍射 半导体 气体传感器 |
| 基金项目: 国家自然科学基金（No.20901029）资助项目。 |
| Abstract: Dense tin oxide films were solvothermally grown from the tin oxide seed films fabricated on glass substrates by sol-gel technique. The morphology and crystal structure of the tin oxide films were characterized by using scanning electron microscopy and X-ray diffraction techniques. The results reveal that the films are composed of cassiterite-type tin oxide crystals with size of 7~10 nm. The film quality can be improved significantly when the sodium dodecylbenzenesulfonate is used as the surfactant during the solvothermal reaction. The gas sensor, which is directly connected tin oxide films to the test circuits by using tweezers with special gripping surfaces, exhibits good sensing performance to nitrogen dioxide gas under mild testing conditions, i.e. room temperature, ambient pressure, and dry air background. The sensor can achieve a detection limit of 0.5 μL·L-1. |
| Keywords: thin films X-ray diffraction semiconductors gas sensor |
| 投稿时间：2013-07-19 修订日期：2013-10-15 |
| 摘要点击次数: 2111 |
| 全文下载次数: 1646 |
| 郝沛沛,陈长龙,魏玉玲,穆晓慧.二氧化锡薄膜：制备及在室温下气敏性质[J].无机化学学报,2014,30(2):451-458. |
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