射频磁控溅射制备MoS2薄膜及其储锂性能研究
Lithium Storage Performance of MoS2 Thin Films Deposited by RF Magnetron Sputtering
作者单位E-mail
王丽秀 南开大学先进能源材料化学教育部重点实验室, 化学化工协同创新中心, 天津 300071  
魏林 南开大学先进能源材料化学教育部重点实验室, 化学化工协同创新中心, 天津 300071  
陶占良 南开大学先进能源材料化学教育部重点实验室, 化学化工协同创新中心, 天津 300071 taozhl@nankai.edu.cn 
陈军 南开大学先进能源材料化学教育部重点实验室, 化学化工协同创新中心, 天津 300071  
摘要: 采用射频磁控溅射法,在Ar气-H2S混合气氛中,以MoS2靶材为原料,在泡沫铜基底上制备了MoS2薄膜。利用X射线衍射(XRD)、Raman光谱、扫描电子显微镜(SEM)、能量弥散X射线谱(EDS)等手段对样品的结构、形貌和成分进行了表征,并探讨了靶功率和基底温度对MoS2薄膜的结构及形貌的影响。结果表明,靶功率的增加可以提高薄膜结晶度,但功率过高会造成薄膜的龟裂;基底温度升高会使MoS2薄膜结晶度明显提高,且形成蠕虫状形貌。靶功率为80W,基底温度为300℃时,可以制备得到具有较高结晶度的蠕虫状MoS2薄膜。对其进行充放电测试表明,在100mA·g-1的电流密度下,其首次放电比容量为980mAh·g-1,经过40周循环,容量可保持为约920mAh·g-1,容量保持率达到93.9%。
关键词: MoS2薄膜  射频磁控溅射  锂离子电池
基金项目: 973计划(No.2011CB935900)、国家自然科学基金(No.21231005、51231003)、天津科技计划(No.12ZCZDJC35300、13JCQNJC06400)和先进能源材料化学“111计划”资助项目
Abstract: MoS2 thin films were deposited on Cu foam substrate by radio-frequency (RF) magnetron sputtering in Ar-H2S mixed atmosphere. XRD, SEM, EDSand Raman spectroscopy were used to characterize the structure, morphology and composition of the MoS2 thin films. The effects of target power and substrate temperature on MoS2 thin films were discussed. The results show that the crystallinity of MoS2 thin films was improved with the increasing of target power and substrate temperature, and the morphology change of MoS2 thin films to worm-like nanowires. Worm-like MoS2 thin films with fine crystallization were synthesized under the target power of 80 Wand substrate temperature of 300 ℃. The electrochemical test results show that the initial discharge specific capacities of worm-like MoS2 thin films reach 980 mAh·g-1 at the current density of 100 mA·g-1. After 40 cycles, the discharge specific capacities were maintained at about 920 mAh·g-1 with the capacity retention efficiency of 93.9%.
Keywords: MoS2 thin film  RF magnetron sputtering  Li-ion battery
投稿时间:2014-03-11 修订日期:2014-05-13
摘要点击次数:  1973
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王丽秀,魏林,陶占良,陈军.射频磁控溅射制备MoS2薄膜及其储锂性能研究[J].无机化学学报,2014,30(9):2043-2048.
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