| n型Cu2O薄膜的简易水热法制备及其光电化学性能 | |
| Preparation by a Simplified Hydro-Thermal Method and Photoelectrochemical Properties of n-Type Cu2O Film | |
| 摘要: 采用一种简单的水热法，通过控制反应时间，使用铜片在只含有Cl-的非含铜前驱物的NaCl溶液中生长出了n型Cu2O薄膜。对制备的样品进行了X射线衍射（XRD）、拉曼光谱（Raman）、扫描电子显微镜（SEM）、X射线光电子能谱（XPS）和光电化学等表征或测试。本水热法相对其他的水热法工艺更简单，成本更低且能进行快速大规模化的生产。且得到的n型Cu2O薄膜晶化程度高，经过Cl-掺杂后，载流子浓度高达9.75×1017 cm-3，在可见光照射下表现出较好的光电转换性能。光电化学和电化学阻抗谱表明在中等浓度（0.1 mol·L-1） NaCl溶液中90℃的条件下水热反应50 h制备的Cu2O薄膜具有最好的光电性能。 | |
| 关键词: 简易水热法 n型Cu2O薄膜 光电化学性能 Cl-掺杂 截流子浓度 | |
| 基金项目: 湖北省自然科学基金（No.2016CFB511）、湖北省教育厅指导性项目（No.B2015036）和国家自然科学基金（No.61705064，11647122）资助。 | |
| Abstract: n-Type Cu2O films were prepared by a simplified hydro-thermal method, using only Cu plate and NaCl solution as precursors. Subsequently, the prepared samples were characterized by X-ray diffraction (XRD), laser raman spectrometer (Raman), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and photoelectrochemical methods. The technology for the preparation of n-type Cu2O films is simpler and lower cost than others and available for the industrialization. The prepared n-type Cu2O films are highly crystallized and have high carrier concentrations (up to 9.75×1017 cm-3) with Cl- doping. The photoelectrochemical and EIS measurements demonstrate that the sample prepared in 0.1 mol·L-1 NaCl solution with 50 h reaction time at 90℃ obtains the best photoelectrochemical properties. | |
| Keywords: simplified hydrothermal method n-type Cu2O photoelectrochemical properties Cl- doping carrier concentration | |
| 投稿时间：2018-01-16 修订日期：2018-04-07 | |
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| 熊良斌,李双明,李必慧,曾庆栋,王波云,聂长江.n型Cu2O薄膜的简易水热法制备及其光电化学性能[J].无机化学学报,2018,34(7):1271-1278. | |
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