| Sb2O3/BiVO4/WO3异质结构建及光电催化合成过氧化氢 |
| Construction of Sb2O3/BiVO4/WO3 heterojunction for photoelectrocatalytic synthesis of hydrogen peroxide |
| 作者 | 单位 | E-mail | | 谢银琼 | 重庆师范大学化学学院, 绿色合成与应用重庆市重点实验室, 重庆 401331 | | | 唐诗 | 重庆师范大学化学学院, 绿色合成与应用重庆市重点实验室, 重庆 401331 | | | 王珊珊 | 重庆师范大学化学学院, 绿色合成与应用重庆市重点实验室, 重庆 401331 | | | 连欣 | 重庆科技学院化学化工学院, 重庆 401331 | | | 郭文龙 | 重庆师范大学化学学院, 绿色合成与应用重庆市重点实验室, 重庆 401331 | gwlcqnu@cqnu.edu.cn | | 刘玺 | 重庆师范大学化学学院, 绿色合成与应用重庆市重点实验室, 重庆 401331 | xliu@cqnu.edu.cn |
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| 摘要: 采用溶剂热法-旋涂法构建了Sb2O3/BiVO4/WO3半导体异质结，并采用X射线衍射、扫描电子显微镜、X射线光电子能谱等手段表征了其物化性质。在1.23 V(vs RHE)电位下，BiVO4/WO3的光电流密度相对于BiVO4提高了2倍。进一步复合Sb2O3之后，虽然Sb2O3/BiVO4/WO3薄膜的光电流密度有所下降，但其光电催化产H2O2的法拉第效率和产生速率得到明显提升。在1.89V(vs RHE)电位下，3c-Sb2O3/BiVO4/WO3薄膜产H2O2的法拉第效率提高到约19%；1c-Sb2O3/BiVO4/WO3薄膜H2O2产生速率从约2.1 μmol·h-1·cm-2提高到约3.6 μmol·h-1·cm-2。此外，Sb2O3的复合显著提高了BiVO4/WO3电极材料的光电催化稳定性。 |
| 关键词: Sb2O3/BiVO4/WO3异质结 光电催化 氧化水反应 过氧化氢 |
| 基金项目: 重庆市自然科学基金(No.cstc2020jcyjmsxmX0735)和重庆市教委基金项目(No.KJQN202101517)资助。 |
| Abstract: Sb2O3/BiVO4/WO3 semiconductor heterojunctions were constructed by solvothermal method and spin coat-ing method, and X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy were used to characterize the physical and chemical properties. The photocurrent density of BiVO4/WO3 was increased by two times compared with BiVO4 at 1.23 V (vs RHE). Although further coating with Sb2O3 decreased the photocurrent density of Sb2O3/BiVO4/WO3 film, the Faraday efficiency and production rate of H2O2 were improved. At 1.89 V (vs RHE), the Faraday efficiency of 3c-Sb2O3/BiVO4/WO3 film was enhanced to ca. 19%; the production rate of H2O2 of 1c-Sb2O3/BiVO4/WO3 film increased from ca. 2.1 to ca. 3.6 μmol·h-1·cm-2. In addition, the coating of Sb2O3 signifi-cantly improved the photoelectrocatalytic stability of BiVO4/WO3 electrode. |
| Keywords: Sb2O3/BiVO4/WO3 heterojunction photoelectrocatalysis water oxidation reaction hydrogen peroxide |
| 投稿时间：2022-08-16 修订日期：2022-12-17 |
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| 谢银琼,唐诗,王珊珊,连欣,郭文龙,刘玺.Sb2O3/BiVO4/WO3异质结构建及光电催化合成过氧化氢[J].无机化学学报,2023,39(3):433-442. |
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