| 离子束辅助沉积技术制备氮掺杂CeO2薄膜及其光催化性能 |
| Photocatalysis performance of nitrogen-doped CeO2 thin films via ion beam-assisted deposition |
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| 摘要: 采用离子束辅助沉积(IBAD)技术制备氮掺杂CeO2薄膜并对其光催化性能进行了研究。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、紫外可见吸收光谱(UV-Vis)对制备的薄膜进行了表征。实验结果表明，通过IBAD技术制备氮掺杂CeO2薄膜的方法可以实现体相均匀氮掺杂，且掺氮量远高于传统氮掺杂方法。SEM结果表明，氮离子束轰击作用并没有改变CeO2的晶体结构，但是会改变CeO2的结晶度和晶格参数，同时，样品表面变得更光滑、粒径更小。另外，该方法使CeO2薄膜的可见光吸收边从370 nm红移到480 nm，增加了其可见光吸收性能。光催化降解亚甲蓝测试结果显示，在可见光下催化120 min时，溶液中的亚甲蓝降解率已经高于90%，并在6次循环稳定性测试后降解率保持在86%左右，显示出良好的光催化稳定性。 |
| 关键词: CeO2 氮掺杂 离子束辅助沉积 光催化 |
| 基金项目: 河北地质大学博士科研启动金项目(No.BQ2024054)、石家庄市科技计划项目(No.2412404301)和河北省高等教育规划研究课题(No.2403146)资助。 |
| Abstract: Nitrogen-doped CeO2 thin films were synthesized by the ion beam-assisted deposition (IBAD) technique, and their photocatalytic performances were studied. The synthesized thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and ultravioletvisible absorption spectroscopy (UV Vis). Results showed that the IBAD technology enabled homogenous doping in the whole bulk of CeO2 thin films, with a significantly higher nitrogen content than traditional nitrogen doping methods. Nitrogen ion bombardment on the growing film surface did not alter the crystal structure of the films—instead, the heavy nitrogen doping induced a smaller grain size of CeO2. Additionally, with the increase of N doping, the surface became smoother with a smaller particle size. The heavy nitrogen doping also induced a redshift of the visible light absorbance edge from 370 to 480 nm, significantly enhancing the visible light absorption performance of CeO2 thin films. Photocatalytic degradation tests of methylene blue showed that after 120 min of visible light irradiation, the degradation rate of methylene blue in the solution exceeded 90% and was maintained at ca. 86% even after 6 cycles, demonstrating excellent visible light photocatalytic stability. |
| Keywords: CeO2 nitrogen doping ion beam assisted deposition photocatalysis |
| 投稿时间：2024-12-11 修订日期：2025-03-06 |
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