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| Structures and Properties of Sb-Doped ZTO Transparent Conducting Films |
| Author Name | Affiliation | E-mail | | CHEN Xiao | School of Material Science and Engineering, Tongji University, Shanghai 201804, China | | | LI Yi-Ming | School of Material Science and Engineering, Tongji University, Shanghai 201804, China | | | LIU Xiao-Jun | School of Material Science and Engineering, Tongji University, Shanghai 201804, China | | | HE Yun-Qiu | School of Material Science and Engineering, Tongji University, Shanghai 201804, China
Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Tongji University, Shanghai 201804, China | heyunqiu@tongji.edu.cn |
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| Abstract: Sb-doped ZTO (ZnSnO3) transparent conducting films were synthesized by sol-gel spin-coating method. The structures and properties of Sb-doped ZTO films were characterized by XRD,SEM,XPS,UV-Vis and Hall effect measurements. Three Sb-doping methods, including the substitution of either Zn2+ or Sn4+, or both the two ions in ZnSnO3 were adopted. The crystalline features, the lattice positions of Sb ion and the ratios of Sb5+ and Sb3+ in Sb-doped ZTO films prepared by different substitution methods were investigated. Followed by a comprehensive comparison of the amount of oxygen vacancy (VO··), interstitial zinc (Zni··) and stannous ion (SnSn"), the effects of Sb-doping concentrations on the crystal structure, the defects, and the electrical properties of the films in different methods were detected. Experimental results indicated that the perovskite structure of the ZnSnO3 crystal has not been disturbed by Sb-doping. Moreover, the Sb ions successfully occupied the corresponding positions of the ZnSnO3 lattice as expected, with varying molar ratios(nSb5+/nSb3+) among the methods. That is, the nSb5+/nSb3+ decreased with the increase of the doping concentration. It has been concluded that the carrier concentrations and mobility were influenced by both the substitution methods and the Sb-doping concentrations, resulting in the variation of the conductivity of the films. Among all films, the Sb0.15Zn0.35Sn0.5O1.5 film obtained a minimum resistivity of 0.423 Ω·cm. Finally, the transmittance of all the as-prepared films were higher than 78% within the 350~800 nm range being demonstrated. |
| Keywords: Sb-doping ZTO films sol-gel defects transparent conductivity |
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| CHEN Xiao,LI Yi-Ming,LIU Xiao-Jun,HE Yun-Qiu.Structures and Properties of Sb-Doped ZTO Transparent Conducting Films[J].Chinese Journal of Inorganic Chemistry,2017,33(3):435-445. |
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